igbt-ipm r series 600v / 75a 6 in one-package 6mbp75ra060 features temperature protection provided by directly detecting the junction temperature of the igbts low power loss and soft switching high performance and high reliability igbt with overheating protection higher reliability because of a big decrease in number of parts in built-in control circuit maximum ratings and characteristics absolute maximum ratings (at tc=25c unless otherwise specified) symbol rating unit min. max. dc bus voltage dc bus voltage (surge) dc bus voltage (short operating) collector-emitter voltage inv collector current dc 1ms duty=61.7% collector power dissipation one transistor junction temperature input voltage of power supply for pre-driver input signal voltage input signal current alarm signal voltage alarm signal current storage temperature operating case temperature isolating voltage (case-terminal) screw torque mounting (m5) terminal (m5) v dc v dc(surge) v sc v ces i c i cp -i c p c t j v cc *1 v in *2 i in v alm *3 i alm *4 t stg t op v iso *5 item 0 0 200 0 - - - - - 0 0 - 0 - -40 -20 - - - 450 500 400 600 75 150 75 320 150 20 vz 1 vcc 15 125 100 ac2.5 3.5 * 6 3.5 * 6 v v v v a a a w c v v ma v ma c c kv nm nm *1 apply vcc between terminal no. 3 and 1, 6 and 4, 9 and 7, 11 and 10. *2 apply vin between terminal no. 2 and 1, 5 and 4, 8 and 7, 13,14,15 and 10. *3 apply v alm between terminal no. 16 and 10. *4 apply i alm to terminal no. 16. *5 50hz/60hz sine wave 1 minute. *6 recommendable value : 2.5 to 3.0 nm electrical characteristics of power circuit (at tc=tj=25c, vcc=15v) item symbol condition min. typ. max. unit inv collector current at off signal input collector-emitter saturation voltage forward voltage of fwd i ces v ce(sat) v f v ce =600v input terminal open ic=75a -ic=75a C C 1.0 ma C C 2.8 v C C 3.0 v fig.1 measurement of case temperature
6mbp75ra060 igbt-ipm electrical characteristics of control circuit (at tc=tj=25c, vcc=15v) item symbol condition min. typ. max. unit power supply current of p-line side pre-driver(one unit) power supply current of n-line side three pre-driver input signal threshold voltage (on/off) input zener voltage over heating protection temperature level hysteresis igbt chips over heating protection temperature level hysteresis collector current protection level inv over current protection delay time under voltage protection level hysteresis alarm signal hold time sc protection delay time limiting resistor for alarm fsw=0 to 15khz tc=-20 to 100c *7 fsw=0 to 15khz tc=-20 to 100c *7 on off rin=20k ohm vdc=0v, ic=0a, case temperature, fig.1 surface of igbt chips tj=125c tj=25c fig.2 tj=25c fig.3 i ccp i ccn v in(th) v z t coh t ch t joh t jh i oc t doc v uv v h t alm t sc r alm 3 10 1.00 1.25 - 110 - 150 - 113 - 11.0 0.2 1.5 - 1425 - - 1.35 1.60 8.0 - 20 - 20 - 10 - - 2 - 1500 18 65 1.70 1.95 - 125 - - - - - 12.5 - - 12 1575 ma ma v v v c c c c a s v v ms s ohm dynamic characteristics (at tc=tj=125c, vcc=15v) item symbol condition min. typ. max. unit switching time (igbt) switching time (fwd) ton ic=75a, vdc=300v toff trr if=75a, vdc=300v 0.3 - - - - 3.6 - - 0.4 s s s thermal characteristics ( tc=25c) item symbol typ. max. unit junction to case thermal resistance case to fin thermal resistance with compound rth(j-c) rth(j-c) rth(c-f) - 0.39 - 0.90 0.05 - c/w c/w c/w inv igbt fwd item symbol min. typ. max. unit dc bus voltage operating power supply voltage range of pre-driver switching frequency of ipm screw torque mounting (m5) terminal (m5) v dc 200 - 400 v v cc 13.5 15 16.5 v f sw 1 - 20 khz - 2.5 - 3.0 nm - 2.5 - 3.0 nm recommendable value * 7 switching frequency of ipm definition of tsc
6mbp75ra060 igbt-ipm block diagram outline drawings, mm mass : 440g pre-drivers include following functions a) amplifier for driver b) short circuit protection c) undervoltage lockout circuit d) over current protection e) igbt chip over heating protection
6mbp75ra060 igbt-ipm characteristics (representative) control circuit power supply current vs. switching frequency switching frequency fsw (khz) 0 5 10 15 20 25 12 13 14 15 16 17 18 power supply voltage vcc (v) power supply current icc (ma) input signal threshold voltage vin ( on ), vin ( off ), (v) input signal threshold voltage vs. power supply voltage junction temperature tj ( c ) 14 12 10 8 6 4 2 0 undervoltage v uvt (v) undervoltage vs. junction temperature junction temperature tj ( c ) undervoltage hysterisis v h (v) undervoltage hysterisis vs. junction temperature power supply voltage vcc ( v ) alarm hold time t alm (msec.) alarm hold time vs. power supply voltage power supply voltage vcc ( v ) overheating protection t coh ,t joh ( c ) oh hysterisis t ch ,t jh ( c) overheating characteristics t coh ,t joh ,t ch ,t jh vs. v cc tj=100c 20 40 60 80 100 120 140 12 13 14 15 16 17 18 12 13 14 15 16 17 18 n-side p-side 35 30 25 20 15 10 5 0 tj=25c tj=125c 2.5 2.0 1.5 1.0 0.5 0 1.0 0.8 0.6 0.4 0.2 0 20 40 60 80 100 120 140 3.0 2.5 2.0 1.5 1.0 0.5 0 200 150 100 50 0
6mbp75ra060 igbt-ipm inverter collector current vs. collector-emitter voltage collector-emitter voltage v ce (v) 0 1 2 3 4 collector current ic (a) collector current vs. collector-emitter voltage collector-emitter voltage v ce (v) collector current ic (a) switching time vs. collector current collector current i c (a) switching time ton, toff (nsec.) switching time vs. collector current collector current i c (a) switching time ton, toff (nsec.) forward current vs. forward voltage foeward voltage v f (v) forward current i f (a) foeward current i f (a) reverse recovery current irr (a) reverse recovery time trr (nsec.) reverse recovery characteristics trr, irr, vs. i f 100 10 0 1 2 3 4 0 1 2 3 4 edc=300v, vcc=15v, tj=25c 1000 100 edc=300v, vcc=15v, tj=125c 150 100 50 0 0 20 40 60 80 100 120 tj=25c 150 100 50 0 tj=125c 150 100 50 0 1000 100 0 20 40 60 80 100 120 0 20 40 60 80 100 120
6mbp75ra060 igbt-ipm transient thermal resistance pulse width pw (sec.) 0.001 0.01 0.1 1 1 0.1 0.01 thermal resistance rth(j-c) (c/w ) inverter reverse biased safe operating area collector-emitter voltage v ce (v) collector current ic (a) case temperature tc ( c ) 0 20 40 60 80 100 120 140 160 350 300 250 200 150 100 50 0 collector power dissipation pc ( w ) power derating for fwd (per device) case temperature tc ( c ) 140 120 100 80 60 40 20 0 collector power dissipation pc (w) switching loss vs. collector current collector current ic ( a ) 0 20 40 60 80 100 120 switching loss eon,eoff,err ( mj/cycle ) switching loss vs. collector current collector current ic ( a ) switching loss eon,eoff,err ( mj/cycle ) 0 20 40 60 80 100 120 140 160 edc=300v, vcc=15v, tj=125c 0 100 200 300 400 500 600 700 750 675 600 525 450 375 300 225 150 75 0 edc=300v, vcc=15v, tj=25c 10 8 6 4 2 0 0 20 40 60 80 100 120 < = vcc=15v, tj 125c power derating for igbt (per device) 10 8 6 4 2 0
6mbp75ra060 igbt-ipm overcurrent protection vs. junction temperature junction temperature tj ( c ) overcurrent protection level ioc (a) 0 20 40 60 80 100 120 140 200 160 120 80 40 0 vcc=15v
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